Nanomaterials: Application & Properties, 7th International Conference Nanomaterials: Application & Properties '2017

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Physical mechanisms of formation of surface states at Si/SiO2 interface in the nanosized MOS transistors
A. Volkov, Dmitrii V. Andreev

Last modified: 2017-07-25

Abstract


This paper shows main physical mechanisms of generation of the surface states at the interface Si/SiO2, which are typical for nanosized MOS transistors. One demonstrates the most common model of the surface state generation. We analyze graphs showing a dependence of lifetime on substrate current (Isub), which are borrowed from the literature. We demonstrate a method to determine charge carrier energy participating in process of surface state generation and a method to ascertain the mechanism of surface state generation in nanosized MOS transistors. We ascertain main parameters of MOS transistors affecting onto the process of surface state generation.