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Thin film of Al2O3 was deposited on the p-Si substrate using thermal evaporation method to deposit Al on p-Si. Furthermore, a chemical vapor deposition method (CVD) was used for the oxidation of Al/p-Si in order to synthesize Al2O3/p-Si structure. The paper is focused on the formation of Al2O3, the bands of Al-O and some bands formed with it through growth operation by analyzing spectra of the Fourier transform infrared (FTIR) spectroscopy. The bands of the Al-O were found at the wavenumber 611 cm-1, which indicates that Al2O3 has been formed. Also SiOx band was found at the wavenumber 1000-1100 cm-1, which refers to the construction of a thin interfacial oxide layer between the Si and the Al2O3 layer and other bands. The current-voltage (I-V) characteristics showed that a reverse leakage current was greater than the forward leakage current. The capacitance-voltage (C-V) measurements were also performed on the samples, revealing the improvement of results.